Preliminary Technical Information
TrenchMV TM
Power MOSFET
IXTH220N055T
IXTQ220N055T
V DSS
I D25
R DS(on)
= 55 V
= 220 A
≤ 4.0 m ?
N-Channel Enhancement Mode
Avalanche Rated
TO-247 (IXTH)
Symbol
Test Conditions
Maximum Ratings
V DSS
V DGR
T J = 25 ° C to 175 ° C
T J = 25 ° C to 175 ° C; R GS = 1 M ?
55
55
V
V
G
D
S
(TAB)
V GSM
I D25
I LRMS
I DM
I AR
E AS
Transient
T C = 25 ° C
Lead Current Limit, RMS
T C = 25 ° C, pulse width limited by T JM
T C = 25 ° C
T C = 25 ° C
± 20
220
75
600
25
1.0
V
A
A
A
A
J
TO-3P (IXTQ)
dv/dt
I S ≤ I DM , di/dt ≤ 100 A/ μ s, V DD ≤ V DSS
T J ≤ 175 ° C, R G = 5 ?
3
V/ns
G
D
S
(TAB)
P D
T J
T JM
T stg
T C = 25 ° C
430
-55 ... +175
175
-55 ... +175
W
° C
° C
° C
G = Gate
S = Source
D = Drain
TAB = Drain
T L
T SOLD
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
300
260
° C
° C
Features
Ultra-low On Resistance
M d
Mounting torque
1.13 / 10 Nm/lb.in.
Unclamped Inductive Switching (UIS)
rated
Weight
TO-3P
TO-247
5.5
6
g
g
Low package inductance
- easy to drive and to protect
175 ° C Operating Temperature
Advantages
Easy to mount
Symbol Test Conditions
(T J = 25 ° C unless otherwise specified)
Characteristic Values
Min. Typ. Max.
Space savings
High power density
BV DSS
V GS(th)
I GSS
I DSS
R DS(on)
V GS = 0 V, I D = 250 μ A
V DS = V GS , I D = 1 mA
V GS = ± 20 V, V DS = 0 V
V DS = V DSS
V GS = 0 V T J = 150 ° C
V GS = 10 V, I D = 25 A, Notes 1, 2
55
2.0
3.1
4.0
± 200
5
250
4.0
V
V
nA
μ A
μ A
m ?
Applications
Automotive
- Motor Drives
- High Side Switch
- 12V Battery
- ABS Systems
DC/DC Converters and Off-line UPS
Primary- Side Switch
High Current Switching
Applications
DS99684 (11/06)
? 2006 IXYS CORPORATION All rights reserved
相关PDF资料
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相关代理商/技术参数
IXTH220N075T 功能描述:MOSFET 220 Amps 75V 3.4 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTH22N50P 功能描述:MOSFET 22 Amps 500V 0.27 Ohm Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTH22P15 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 22A I(D) | TO-218VAR
IXTH22P20 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 22A I(D) | TO-218VAR
IXTH230N085T 功能描述:MOSFET 230 Amps 85V 4.1 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTH23N25MA 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 23A I(D) | TO-247(5)
IXTH23N25MB 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 23A I(D) | TO-247(5)
IXTH240N055T 功能描述:MOSFET MOSFET Id240 BVdass55 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube